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IRF8707GPbF |
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| Part Number | IRF8707GPbF |
| Manufacturer | International Rectifier |
| Description | The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are critical in synchron... |
| Features |
tions.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation
30 ± 20
V
11
9.1 A
88
2.5 1.6
W
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
0.02 -55 to + 150
W/°C °C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead fRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Typ. – – – – – – M... |
| Document |
 IRF8707GPbF Data Sheet
PDF 244.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF8707PBF |
International Rectifier |
Power MOSFET |
|
| 2 | IRF8714GPbF |
International Rectifier |
Power MOSFET |
|
| 3 | IRF8714PBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF8714PBF-1 |
International Rectifier |
Power MOSFET |
|
| 5 | IRF8721GPbF |
International Rectifier |
Power MOSFET |
|