IRF7N60 - ETC

IRF7N60 POWER MOSFET

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed.

Features

‹ ‹ ‹ Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Front View G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ =.