www.DataSheet4U.com PD - 94433 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF7NJZ44V 60V, N-CHANNEL Product Summary Part Number IRF7NJZ44V BVDSS 60V RDS(on) 0.0165Ω ID 22A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. .
n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7N1405 |
International Rectifier |
HEXFET-R POWER MOSFET SURFACE MOUNT | |
2 | IRF7N60 |
ETC |
POWER MOSFET | |
3 | IRF7N60 |
Suntac Electronic |
POWER MOSFET | |
4 | IRF7NA2907 |
International Rectifier |
HEXFET POWER MOSFET SURFACE MOUNT | |
5 | IRF710 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | IRF710 |
INCHANGE |
N-Channel MOSFET | |
7 | IRF710 |
ART CHIP |
N-Channel MOSFET | |
8 | IRF710 |
Vishay |
Power MOSFET | |
9 | IRF7101 |
International Rectifier |
Power MOSFET | |
10 | IRF7101PBF |
International Rectifier |
Power MOSFET | |
11 | IRF7102 |
International Rectifier |
Power MOSFET | |
12 | IRF7103 |
International Rectifier |
Power MOSFET |