IRF7103PBF - International Rectifier

IRF7103PBF Power MOSFET

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniqu.

Features

r Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. 3.0 2.3 10 2.0 0.016 ± 20 4.5 -55 to + 150 Units A W W/°C V V/nS °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient „ Min. ––– Typ. ––– Max. 62.5 Units °C/W 02/09/10 IRF7103PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Stat.