IRF7101PBF - International Rectifier

IRF7101PBF Power MOSFET

HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS = 20V RDS(on) = 0.10Ω ID = 3.5A Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d.

Features

pace. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 100°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Sodering Temperature, for 10 seconds Max. 3.5 2.3 14 2.0 0.016 ± 12 3.0 -55 to + 150 3.