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IRF7N60 |
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| Part Number | IRF7N60 |
| Manufacturer | ETC |
| Description | This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to w... |
| Features |
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Front View
G ATE
SO URCE
DRAIN
G
S
1 2 3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ =... |
| Document |
 IRF7N60 Data Sheet
PDF 217.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7N60 |
Suntac Electronic |
POWER MOSFET |
|
| 2 | IRF7N1405 |
International Rectifier |
HEXFET-R POWER MOSFET SURFACE MOUNT |
|
| 3 | IRF7NA2907 |
International Rectifier |
HEXFET POWER MOSFET SURFACE MOUNT |
|
| 4 | IRF7NJZ44V |
International Rectifier |
HEXFET-R POWER MOSFET SURFACE MOUNT |
|
| 5 | IRF710 |
Intersil Corporation |
N-Channel Power MOSFET |
|