SMD Type N-Channel MOSFET IRF7855 (KRF7855) ■ Features ● VDS (V) = 60V ● ID = 12 A (VGS = 10V) ● RDS(ON) < 9.4mΩ (VGS = 10V) S S S G 1 2 3 4 SOP-8 AA 8D 7D 6D 5D +0.040.21 -0.02 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage C.
● VDS (V) = 60V
● ID = 12 A (VGS = 10V)
● RDS(ON) < 9.4mΩ (VGS = 10V)
S
S
S
G
1 2 3 4
SOP-8
AA 8D 7D 6D 5D
+0.040.21 -0.02
MOSFET
1.50 0.15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation Linear Derating Factor Avalanche Current Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range
TA=25℃ TA=70.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7853PBF |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRF7854PBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRF7855PBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRF7805 |
International Rectifier |
N-Channel Power MOSFET | |
5 | IRF7805A |
International Rectifier |
N-Channel Power MOSFET | |
6 | IRF7805PBF |
Infineon |
Power MOSFET | |
7 | IRF7805PbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
8 | IRF7805PBF-1 |
International Rectifier |
Power MOSFET | |
9 | IRF7805TRPbF-1 |
Infineon |
Power MOSFET | |
10 | IRF7805TRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
11 | IRF7805ZPbF |
International Rectifier |
Power MOSFET | |
12 | IRF7805ZPBF-1 |
International Rectifier |
Power MOSFET |