IRF7854PBF - International Rectifier

IRF7854PBF HEXFET Power MOSFET

PD - 97172 IRF7854PbF Applications l Primary Side Switch in Bridge or twoswitch forward topologies using 48V (±10%) or 36V to 60V ETSI range inputs. l Secondary Side Synchronous Rectification Switch for 12Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characteri.

Features

11 -55 to + 150 Units V A c W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W ei
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  – Notes  through ‡ are on page 8 www.irf.com 1 01/05/06 www.DataSheet.in IRF7854PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakag.