These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core D.
IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 106 25°C 70°C IDM PD Symbol VDS VGS ID 13 10 100 2.5 1.6
–55 to 150 2.5 106 °C A IRF7805 30 ±12 13 10 100 W A IRF7805A Units V
Thermal Resistance Parameter Maximum Junction-to-Ambient
RθJA
Max. 50
Units °C/W
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7805 |
International Rectifier |
N-Channel Power MOSFET | |
2 | IRF7805PBF |
Infineon |
Power MOSFET | |
3 | IRF7805PbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
4 | IRF7805PBF-1 |
International Rectifier |
Power MOSFET | |
5 | IRF7805TRPbF-1 |
Infineon |
Power MOSFET | |
6 | IRF7805TRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
7 | IRF7805ZPbF |
International Rectifier |
Power MOSFET | |
8 | IRF7805ZPBF-1 |
International Rectifier |
Power MOSFET | |
9 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET | |
10 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET | |
11 | IRF7807APbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
12 | IRF7807APbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |