Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% tested for Rg PD - 96011A IRF7805ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) :30V 6..
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06/30/05
IRF7805ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient
30
–
–
–
–
–
– V VGS = 0V, ID = 250µA
–
–
– 0.023
–
–
–
–
–
– 5.5 6.8
–
–
– 7.0 8.7
V/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 16A eVGS = 4.5V, ID = 13A
1.35
–
–
– 2.25 V VDS = VGS, ID = 250µA
–
–
– - 4.7
–
–
– mV/°C
IDSS
Drain-to-Source.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7805ZPBF-1 |
International Rectifier |
Power MOSFET | |
2 | IRF7805 |
International Rectifier |
N-Channel Power MOSFET | |
3 | IRF7805A |
International Rectifier |
N-Channel Power MOSFET | |
4 | IRF7805PBF |
Infineon |
Power MOSFET | |
5 | IRF7805PbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
6 | IRF7805PBF-1 |
International Rectifier |
Power MOSFET | |
7 | IRF7805TRPbF-1 |
Infineon |
Power MOSFET | |
8 | IRF7805TRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
9 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET | |
10 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET | |
11 | IRF7807APbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters | |
12 | IRF7807APbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |