IRF7853PBF - International Rectifier

IRF7853PBF HEXFET Power MOSFET

PD - 97069 IRF7853PbF HEXFET® Power MOSFET Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 D S l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D.

Features

ower Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ. Max. 20 50 Units °C/W ei
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  – Notes  through ‡ are on page 8 www.irf.com 1 1/5/06 www.DataSheet.in IRF7853PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drai.