IRF7828PBF - International Rectifier

IRF7828PBF Power MOSFET

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7828 has been optimized for all parameters that are critical in synchro.

Features

e w DEVICE CHARACTERISTICS… IRF7828PbF RDS(on) QG Qsw Qoss 9.5mΩ 9.2nC 3.7nC 6.1nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead R θJA R θJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 70°C IDM PD Symbol VDS VGS ID IRF7828PbF 30 ±20 13.6 11 100 2.5 1.6
  –55 to 150 .