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IRF7828PBF |
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| Part Number | IRF7828PBF |
| Manufacturer | International Rectifier |
| Description | This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high... |
| Features |
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DEVICE CHARACTERISTICS
IRF7828PbF RDS(on) QG Qsw Qoss 9.5mΩ 9.2nC 3.7nC 6.1nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead R θJA R θJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 70°C IDM PD Symbol VDS VGS ID IRF7828PbF 30 ±20 13.6 11 100 2.5 1.6 –55 to 150 ... |
| Document |
 IRF7828PBF Data Sheet
PDF 601.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7828 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRF7820PBF |
International Rectifier |
Power MOSFET |
|
| 3 | IRF7821 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF7821PBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF7821PBF-1 |
International Rectifier |
Power MOSFET |
|