IRF7822PBF - International Rectifier

IRF7822PBF Power MOSFET

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7822 has been optimized for all parameters that are critical in synchro.

Features

ie w DEVICE CHARACTERISTICS… IRF7822 RDS(on) QG Qsw Qoss 5.0mΩ 44nC 12nC 27nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TA = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead RθJA RθJL Max. 40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TA = 70°C IDM PD Symbol VDS VGS ID IRF7822 30 ±12 18 13 150 3.1 3.0
  –55 to 150 3.8 150 °C .