IRF7828 - International Rectifier

IRF7828 HEXFET Power MOSFET

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7828 has been optimized for all parameters that are critical in synchro.

Features

hniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead RθJA RθJL Max. 50 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 70°C IDM PD Symbol VDS VGS ID IRF7828 30 ±20 13.6 11 100 2.5 1.6
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