IRF6218SPbF - Infineon

IRF6218SPbF Power MOSFET

SMPS MOSFET Applications  Reset Switch for Active Clamp Reset DC-DC converters VDSS - 150V IRF6218SPbF HEXFET® Power MOSFET RDS(on) (max) 150m@ VGS = -10V ID -27A Benefits  Low Gate to Drain Charge to Reduce Switching Losses  Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)  Fully Characterized .

Features

e Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol Parameter RJC Junction-to-Case  RJA Junction-to-Ambient ( PCB Mount, steady state)  Max. -150 ± 20 - 27 -19 - 110 250 1.6 8.2 -55 to + 175 300 Typ.
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  – Max. 0.61 40 Units V A W W/°C V/ns °C Units °C/W Notes  through  are on page 2 1 2016-5-26 IRF6218SPbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Thre.