IRF6218PBF - International Rectifier

IRF6218PBF HEXFET Power MOSFET

www.DataSheet4U.com PD -95441 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free l IRF6218PbF HEXFET® Power MOSFET -150V 150m:@VGS = -10V VDSS RDS(on) max ID -27A Benefits l l D l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (S.

Features

10 lbf
•in (1.1N
•m) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case g Typ. Max. 0.61
  –
  –
  – 62 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient g g
  –
  –
  – 0.50
  –
  –
  – Notes  through „ are on page 7 www.irf.com 1 06/28/04 IRF6218PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage .