IRF621 - STMicroelectronics

IRF621 N-Channel MOSFET

IRF 620/FI-621/FI IRF 622/FI-623/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI Voss 200 V 200 V 150 V 150 V 200 V 200 V 150 V 150 V Ros(on) 0.8 0 0.8 0 0.80 0.8 0 1.2 0 1.2 0 1.2 0 1.2 0 10 • 5A 4A 5A 4A 4A 3.5 A 4A 3.5 A e 200V FOR TELECOMMUNICATION APPLICATIONS e ULTRA FAST S.

Features

urce voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (pulsed) 10 Drain current (cont.) at Tc = 25°C 10 Drain current (cont.) at Tc = 100°C Drain current (cont.) at Tc= 25°C Drain current (cont.) at Tc= 100°C Ptot T stg T
· Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature 200 150 200 150 200 150 200 150 ±20 20 20 16 16 620 621 622 623 5 5 4 4 3 3 2.5 2.5 620FI 621FI 622FI 623FI 4 4 3.5 3.5 2.5 2.5 2 2 TO-220 ISOWATT220 40 30 0.32 0.24 -55 to 150 150 V V V A A A A A W .