IRF6218 - International Rectifier

IRF6218 SMPS MOSFET

www.DataSheet4U.com PD - 95862 SMPS MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters IRF6218 HEXFET® Power MOSFET l -150V 150m:@VGS = -10V VDSS RDS(on) max ID -27A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l.

Features

N
•m) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case g Typ. Max. 0.61
  –
  –
  – 62 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient g g
  –
  –
  – 0.50
  –
  –
  – Notes  through „ are on page 7 www.irf.com 1 04/22/04 IRF6218 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Uni.