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Applications l Reset Switch for Active Clamp Reset DC-DC converters SMPS MOSFET PD - 95863 IRF6218S IRF6218L HEXFET® Power MOSFET VDSS RDS(on) max ID : -150V 150m @VGS = -10V -27A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) .
150 ± 20 -27 -19 -110 250
1.6 8.2 -55 to + 175
300 (1.6mm from case )
Typ.
–
–
–
–
–
–
Max. 0.61 40
Units V A
W W/°C V/ns
°C
Units °C/W
Notes through are on page 9 www.irf.com
1
4/22/04
IRF6218S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage -150
–
–
–
–
–
– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–
–
– -0.17
–
–
– V/°C Reference to 25°C, ID = -1mA
RDS(on)
f Static Drain-to-Source On-Resistance
–
–
– 120 150 mΩ VGS = -10V, ID = -16A
VGS(th)
Gate Threshold Voltage
-.
IRF6218S - INCHANGE
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤150mΩ(@VGS= -10V; ID= -16A) ·Adva.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF6218 |
International Rectifier |
SMPS MOSFET |
|
| 2 | IRF6218 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF6218L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF6218PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF6218SPbF |
Infineon |
Power MOSFET |
|
| 6 | IRF621 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 7 | IRF621 |
STMicroelectronics |
N-Channel MOSFET |
|
| 8 | IRF621 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 9 | IRF6215 |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRF6215L |
International Rectifier |
(IRF6215L/S) HEXFET Power MOSFET |
|
| 11 | IRF6215LPBF |
International Rectifier |
Power MOSFET |
|
| 12 | IRF6215PBF |
International Rectifier |
Power MOSFET |
|