Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a.
M PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-40 -29 -140 200 1.3 ± 20 780 -21 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf
•in (1.1N
•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Paramete.
IRF5210 - INCHANGE
·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF521 |
STMicroelectronics |
N-Channel MOSFET |
|
| 2 | IRF521 |
Supertex Inc |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FET |
|
| 3 | IRF521 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF5210L |
International Rectifier |
Power MOSFET |
|
| 5 | IRF5210L |
INCHANGE |
P-Channel MOSFET |
|
| 6 | IRF5210LPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF5210S |
International Rectifier |
Power MOSFET |
|
| 8 | IRF5210S |
INCHANGE |
P-Channel MOSFET |
|
| 9 | IRF5210SPBF |
International Rectifier |
Power MOSFET |
|
| 10 | IRF5210SPBF |
INCHANGE |
P-Channel MOSFET |
|
| 11 | IRF521FI |
STMicroelectronics |
N-Channel MOSFET |
|
| 12 | IRF520 |
STMicroelectronics |
N-Channel Power MOSFET |
|