IRF520 - Fairchild Semiconductor

IRF520 N-Channel Power MOSFET

Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications su.

Features

• 9.2A, 100V
• rDS(ON) = 0.270Ω
• SOA is Power Dissipation Limited
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF520 Rev. B IRF520 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .