IRF521 - STMicroelectronics

IRF521 N-Channel MOSFET

IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI Voss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V Ros(on) 0.270 0.270 0.270 0.27 0 0.36 0 0.36 0 0.36 0 0.36 0 10 • 9.2 A 7A 9.2 A 7A 8A 6A 8A 6A e 80-1 00 VOLTS - FOR DC/DC CONVERTERS e HIGH CURRENT .

Features

2FI 523 523FI VOS
* VOGR
* VGS 10M (e) Drain-source voltage (VGS = 0) Draili-gate voltage (RGs = 20 KO) Gate-source voltage Drain current (pulsed) 10 Drain current (cant.) at Tc= 25°C 10 Drain current (cant.) at Tc= 100°C Drain current (cant.) at Tc = 25°C Drain current (cant.) at Tc= 100°C -Ptot - Tstg T Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature -100 80 100 80 100 80 100 80 ±20 37 37 32 32 520 521 522 523 9.2 9.2 8 8 6.5 6.5 5.6 5.6 520FI 521FI 522FI 523FI 7 7 6 6 4 4 3.5 3.5 TO-220 ISOWATT220 6.