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IRF5210 |
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| Part Number | IRF5210 |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
M PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-40 -29 -140 200 1.3 ± 20 780 -21 20 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Paramete... |
| Document |
 IRF5210 Data Sheet
PDF 125.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF521 |
STMicroelectronics |
N-Channel MOSFET |
|
| 2 | IRF521 |
Supertex Inc |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FET |
|
| 3 | IRF521 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF5210 |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF5210L |
International Rectifier |
Power MOSFET |
|