IRF5210LPBF - International Rectifier

IRF5210LPBF Power MOSFET

Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 60mΩ G .

Features

of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D D S D G D2Pak IRF5210SPbF S D G TO-262 IRF5210LPbF G Gate D Drain S Source Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ -10V Continuous Dr.