SMD Type N-Channel MOSFET IRF3808S (KRF3808S) Ƶ Features ƽ VDSS = 75V ƽ RDS(ON) = 0.007 ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Pa.
ƽ VDSS = 75V ƽ RDS(ON) = 0.007 ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current ķ Power Dissipation Single Pulse Avalanche Energy ĸ Avalanche Current ķ Repetitive Avalanche Energy Ľ Peak Diode Recovery dv/dt Ĺ Thermal Resistance Junction-to-Case Thermal Resistance.Junction- to-Ambient (PC.
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest.
Isc N-Channel MOSFET Transistor IRF3808S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF3808 |
International Rectifier |
Power MOSFET | |
2 | IRF3808 |
INCHANGE |
N-Channel MOSFET | |
3 | IRF3808L |
International Rectifier |
Power MOSFET | |
4 | IRF3808L |
INCHANGE |
N-Channel MOSFET | |
5 | IRF3808LPBF |
International Rectifier |
(IRF3808SPBF / IRF3808LPBF) AUTOMOTIVE MOSFET | |
6 | IRF3808PBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRF3808SPBF |
International Rectifier |
AUTOMOTIVE MOSFET | |
8 | IRF3805 |
International Rectifier |
Power MOSFET | |
9 | IRF3805 |
INCHANGE |
N-Channel MOSFET | |
10 | IRF3805L |
International Rectifier |
Power MOSFET | |
11 | IRF3805L-7PPbF |
International Rectifier |
Power MOSFET | |
12 | IRF3805LPbF |
International Rectifier |
Power MOSFET |