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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Sour.
·With To-262 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
75
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-ContinuousTc=25℃ Tc=100℃
106 75
A
IDM
Drain Current-Single Pulsed
550
A
PD
Total Dissipation @TC=25℃
200
W
Tch
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·THE.
IRF3808L - International Rectifier
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF3808 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF3808 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF3808LPBF |
International Rectifier |
(IRF3808SPBF / IRF3808LPBF) AUTOMOTIVE MOSFET |
|
| 4 | IRF3808PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF3808S |
International Rectifier |
Power MOSFET |
|
| 6 | IRF3808S |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IRF3808S |
Kexin |
N-Channel MOSFET |
|
| 8 | IRF3808SPBF |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 9 | IRF3805 |
International Rectifier |
Power MOSFET |
|
| 10 | IRF3805 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IRF3805L |
International Rectifier |
Power MOSFET |
|
| 12 | IRF3805L-7PPbF |
International Rectifier |
Power MOSFET |
|