This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for us.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET D VDSS = 55.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF3805L |
International Rectifier |
Power MOSFET | |
2 | IRF3805LPbF |
International Rectifier |
Power MOSFET | |
3 | IRF3805 |
International Rectifier |
Power MOSFET | |
4 | IRF3805 |
INCHANGE |
N-Channel MOSFET | |
5 | IRF3805PbF |
International Rectifier |
Power MOSFET | |
6 | IRF3805S |
International Rectifier |
Power MOSFET | |
7 | IRF3805S |
INCHANGE |
N-Channel MOSFET | |
8 | IRF3805S-7PPbF |
International Rectifier |
Power MOSFET | |
9 | IRF3805SPbF |
International Rectifier |
Power MOSFET | |
10 | IRF3808 |
International Rectifier |
Power MOSFET | |
11 | IRF3808 |
INCHANGE |
N-Channel MOSFET | |
12 | IRF3808L |
International Rectifier |
Power MOSFET |