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IRF3808S |
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| Part Number | IRF3808S |
| Manufacturer | International Rectifier |
| Description | Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. ... |
| Features |
of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.
D2Pak IRF3808S
TO-262 IRF3808L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Facto... |
| Document |
 IRF3808S Data Sheet
PDF 161.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3808 |
International Rectifier |
Power MOSFET |
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| 2 | IRF3808 |
INCHANGE |
N-Channel MOSFET |
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| 3 | IRF3808L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3808L |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF3808LPBF |
International Rectifier |
(IRF3808SPBF / IRF3808LPBF) AUTOMOTIVE MOSFET |
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