isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.
·Static drain-source on-resistance:
RDS(on) ≤7.0mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
140
IDM
Drain Current-Single Pulsed
550
PD
Total Dissipation @TC=25℃
330
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A .
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF3805 |
International Rectifier |
Power MOSFET | |
2 | IRF3805 |
INCHANGE |
N-Channel MOSFET | |
3 | IRF3805L |
International Rectifier |
Power MOSFET | |
4 | IRF3805L-7PPbF |
International Rectifier |
Power MOSFET | |
5 | IRF3805LPbF |
International Rectifier |
Power MOSFET | |
6 | IRF3805PbF |
International Rectifier |
Power MOSFET | |
7 | IRF3805S |
International Rectifier |
Power MOSFET | |
8 | IRF3805S |
INCHANGE |
N-Channel MOSFET | |
9 | IRF3805S-7PPbF |
International Rectifier |
Power MOSFET | |
10 | IRF3805SPbF |
International Rectifier |
Power MOSFET | |
11 | IRF3808L |
International Rectifier |
Power MOSFET | |
12 | IRF3808L |
INCHANGE |
N-Channel MOSFET |