IRF3808 International Rectifier Power MOSFET Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

IRF3808

International Rectifier
IRF3808
IRF3808 IRF3808
zoom Click to view a larger image
Part Number IRF3808
Manufacturer International Rectifier
Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. ...
Features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltag...

Document Datasheet IRF3808 Data Sheet
PDF 131.04KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IRF3805
International Rectifier
Power MOSFET Datasheet
2 IRF3805
INCHANGE
N-Channel MOSFET Datasheet
3 IRF3805L
International Rectifier
Power MOSFET Datasheet
4 IRF3805L-7PPbF
International Rectifier
Power MOSFET Datasheet
5 IRF3805LPbF
International Rectifier
Power MOSFET Datasheet
More datasheet from International Rectifier



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact