Isc N-Channel MOSFET Transistor IRF3805S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
210 150
890
PD
Total Dissipation @TC=25℃
300
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL C.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF3805 |
International Rectifier |
Power MOSFET | |
2 | IRF3805 |
INCHANGE |
N-Channel MOSFET | |
3 | IRF3805L |
International Rectifier |
Power MOSFET | |
4 | IRF3805L-7PPbF |
International Rectifier |
Power MOSFET | |
5 | IRF3805LPbF |
International Rectifier |
Power MOSFET | |
6 | IRF3805PbF |
International Rectifier |
Power MOSFET | |
7 | IRF3805S-7PPbF |
International Rectifier |
Power MOSFET | |
8 | IRF3805SPbF |
International Rectifier |
Power MOSFET | |
9 | IRF3808 |
International Rectifier |
Power MOSFET | |
10 | IRF3808 |
INCHANGE |
N-Channel MOSFET | |
11 | IRF3808L |
International Rectifier |
Power MOSFET | |
12 | IRF3808L |
INCHANGE |
N-Channel MOSFET |