IPP230N06L3G - Infineon Technologies

IPP230N06L3G Power-Transistor

Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC612.

Features

• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21 IPB230N06L3 G IPP230N06L3 G Product Summary VDS RDS(on),max ID 60 V 23 mW 30 A Type IPB230N06L3 G IPP230N06L3 G Package Marking PG-TO263-3 230N06L PG-TO220-3 230N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuou.