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Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Pa.
•N-channel,normallevel
•FastDiode(FD)withreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 250 V
RDS(on),max
22
mΩ
ID 61 A
OptiMOSTMFDPower-Transistor,250V IPP220N25NFD
TO-220-3
tab
Gate Pin 1
Drain Pin 2, tab
Source Pin 3
Type/OrderingCode IPP220N25NFD
Package PG-TO220-3
Marking 220N25NF
Relat.
IPP220N25NFD - INCHANGE
isc N-Channel MOSFET Transistor IPP220N25NFD，IIPP220N25NFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤22mΩ .
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|---|---|---|---|---|
| 1 | IPP22N03S4L-15 |
Infineon Technologies |
Power-Transistor |
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| 2 | IPP200N15N3 |
Infineon |
Power-Transistor |
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| 3 | IPP200N15N3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPP200N15N3G |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPP200N25N3 |
Infineon |
Power-Transistor |
|
| 6 | IPP200N25N3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPP200N25N3G |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPP230N06L3G |
Infineon Technologies |
Power-Transistor |
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| 9 | IPP25N06S3-25 |
Infineon Technologies |
Power-Transistor |
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| 10 | IPP25N06S3L-22 |
Infineon Technologies |
Power-Transistor |
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| 11 | IPP26CN10N |
INCHANGE |
N-Channel MOSFET |
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| 12 | IPP26CN10N |
Infineon |
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|