IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 20 mW 64 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target a.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
250 V 20 mW 64 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package Marking
PG-TO263-3 200N25N
PG-TO220-3 200N25N
PG-TO262-3 200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
S.
isc N-Channel MOSFET Transistor IPP200N25N3,IIPP200N25N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤20mΩ ·E.
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---|---|---|---|---|
1 | IPP200N25N3G |
Infineon Technologies |
Power-Transistor | |
2 | IPP200N15N3 |
Infineon |
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3 | IPP200N15N3 |
INCHANGE |
N-Channel MOSFET | |
4 | IPP200N15N3G |
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5 | IPP220N25NFD |
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6 | IPP220N25NFD |
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7 | IPP22N03S4L-15 |
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8 | IPP230N06L3G |
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9 | IPP25N06S3-25 |
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10 | IPP25N06S3L-22 |
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11 | IPP26CN10N |
INCHANGE |
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12 | IPP26CN10N |
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