IPP200N15N3 - Infineon

IPP200N15N3 Power-Transistor

IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1).

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Package PG-TO263-3 PG-TO252-3 Marking 200N15N 200N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Sym.