IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 30 14.6 22 PG-TO262-3-1 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanc.
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO220-3-1
Type IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N03L15 4N03L15 4N03L15
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, sing.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP220N25NFD |
Infineon |
MOSFET | |
2 | IPP220N25NFD |
INCHANGE |
N-Channel MOSFET | |
3 | IPP200N15N3 |
Infineon |
Power-Transistor | |
4 | IPP200N15N3 |
INCHANGE |
N-Channel MOSFET | |
5 | IPP200N15N3G |
Infineon Technologies |
Power-Transistor | |
6 | IPP200N25N3 |
Infineon |
Power-Transistor | |
7 | IPP200N25N3 |
INCHANGE |
N-Channel MOSFET | |
8 | IPP200N25N3G |
Infineon Technologies |
Power-Transistor | |
9 | IPP230N06L3G |
Infineon Technologies |
Power-Transistor | |
10 | IPP25N06S3-25 |
Infineon Technologies |
Power-Transistor | |
11 | IPP25N06S3L-22 |
Infineon Technologies |
Power-Transistor | |
12 | IPP26CN10N |
INCHANGE |
N-Channel MOSFET |