Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC612.
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G
Product Summary VDS RDS(on),max (SMD) ID
60 V 8.1 mΩ 50 A
Type
IPB081N06L3 G
IPP084N06L3 G
IPI084N06L3 G
Package Marking
PG-TO263-3 081N06L
PG-TO220-3 084N06L
PG-TO262-3 084N06L
Maximum ratings, at T j=25 °C, unless oth.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP080N03L |
Infineon |
Power-Transistor | |
2 | IPP080N03L |
INCHANGE |
N-Channel MOSFET | |
3 | IPP080N03LG |
Infineon |
Power-Transistor | |
4 | IPP080N06NG |
Infineon Technologies |
Power-Transistor | |
5 | IPP082N10N3G |
Infineon Technologies |
Power-Transistor | |
6 | IPP082N10NF2S |
Infineon |
MOSFET | |
7 | IPP083N10N5 |
Infineon |
MOSFET | |
8 | IPP083N10N5 |
INCHANGE |
N-Channel MOSFET | |
9 | IPP084N06L3 |
Infineon |
Power-Transistor | |
10 | IPP084N06L3 |
INCHANGE |
N-Channel MOSFET | |
11 | IPP084N06L3G |
Infineon Technologies |
Power-Transistor | |
12 | IPP085N06LG |
Infineon Technologies |
Power-Transistor |