IPP083N10N5 - INCHANGE

IPP083N10N5 N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP083N10N5，IIPP083N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RAT.

Features

·Static drain-source on-resistance: RDS(on) ≤8.3mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 73 IDM Drain Current-Single Pulsed 292 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A .