IPP085N06LG - Infineon Technologies

IPP085N06LG Power-Transistor

www.DataSheet4U.com IPB085N06L G IPP085N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 8.2 80 V mΩ A Type IPB085N06L G IPP0.

Features

• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 8.2 80 V mΩ A Type IPB085N06L G IPP085N06L G Type IPB085N06L G Package IPP085N06L G Marking Package P-TO263-3-2 P-TO263-3-2 085N06L P-TO220-3-1 Marking P-TO220-3-1 085N06L 085N06L 085N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche .