IPP080N03L - INCHANGE

IPP080N03L N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode: Vth =1.0 to 2.2V (VDS = 0 V, ID=250μA) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device fo.

Features

·Static drain-source on-resistance: RDS(on) ≤8.0mΩ
·Enhancement mode: Vth =1.0 to 2.2V (VDS = 0 V, ID=250μA)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 47 Tj Max. Operating Junction Temperature 175 Tstg Stora.