IPP081N06L3G |
Part Number | IPP081N06L3G |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, l... |
Features |
• Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.1 mΩ 50 A Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Package Marking PG-TO263-3 081N06L PG-TO220-3 084N06L PG-TO262-3 084N06L Maximum ratings, at T j=25 °C, unless oth... |
Document |
IPP081N06L3G Data Sheet
PDF 415.05KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP080N03L |
Infineon |
Power-Transistor | |
2 | IPP080N03L |
INCHANGE |
N-Channel MOSFET | |
3 | IPP080N03LG |
Infineon |
Power-Transistor | |
4 | IPP080N06NG |
Infineon Technologies |
Power-Transistor | |
5 | IPP082N10N3G |
Infineon Technologies |
Power-Transistor |