IPI126N10N3G - Infineon Technologies

IPI126N10N3G Power-Transistor

IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) fo.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 Type IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Package PG-TO220-3 PG-TO263-3 Marking 126N10N 123N10N Maximum ratings, at T j=25 °C, unless otherwise specified PG-TO262-3 126N10N .