IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) f.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max TO-263 ID
100 V 12.3 mΩ 58 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package Marking
PG-TO220-3 126N10N
PG-TO263-3 123N10N
PG-TO262-3 126N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPI126N10N3G |
Infineon Technologies |
Power-Transistor | |
2 | IPI120N04S3-02 |
Infineon |
Power-Transistor | |
3 | IPI120N04S4-01 |
Infineon |
Power-Transistor | |
4 | IPI120N04S4-02 |
Infineon |
Power-Transistor | |
5 | IPI120N06S4-02 |
Infineon |
Power-Transistor | |
6 | IPI120N06S4-03 |
Infineon |
Power-Transistor | |
7 | IPI120N06S4-H1 |
Infineon |
Power-Transistor | |
8 | IPI120N08S4-03 |
Infineon |
Power-Transistor | |
9 | IPI120N08S4-04 |
Infineon |
Power-Transistor | |
10 | IPI120N10S4-03 |
Infineon |
Power-Transistor | |
11 | IPI120N10S4-05 |
Infineon |
Power-Transistor | |
12 | IPI120P04P4-04 |
Infineon |
Power-Transistor |