OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 Product Summary V DS R DS(on),max (SMD version) ID 80 V 2.5 mW 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO22.
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03
Product Summary V DS R DS(on),max (SMD version) ID
80 V 2.5 mW 120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120N08S4-03 IPI120N08S4-03 IPP120N08S4-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0803 4N0803 4N0803
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPI120N08S4-04 |
Infineon |
Power-Transistor | |
2 | IPI120N04S3-02 |
Infineon |
Power-Transistor | |
3 | IPI120N04S4-01 |
Infineon |
Power-Transistor | |
4 | IPI120N04S4-02 |
Infineon |
Power-Transistor | |
5 | IPI120N06S4-02 |
Infineon |
Power-Transistor | |
6 | IPI120N06S4-03 |
Infineon |
Power-Transistor | |
7 | IPI120N06S4-H1 |
Infineon |
Power-Transistor | |
8 | IPI120N10S4-03 |
Infineon |
Power-Transistor | |
9 | IPI120N10S4-05 |
Infineon |
Power-Transistor | |
10 | IPI120P04P4-04 |
Infineon |
Power-Transistor | |
11 | IPI120P04P4L-03 |
Infineon |
Power-Transistor | |
12 | IPI126N10N3 |
Infineon |
Power-Transistor |