IPI120N04S3-02 - Infineon

IPI120N04S3-02 Power-Transistor

OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Product Summary V DS R DS(on),max (SMD version) ID 40 V 2.0 mΩ 120 A PG-.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Product Summary V DS R DS(on),max (SMD version) ID 40 V 2.0 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N04S3-02 IPI120N04S3-02 IPP120N04S3-02 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0402 3PN0402 3PN0402 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain c.