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IPI126N10N3G |
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| Part Number | IPI126N10N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C op... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Package PG-TO220-3 PG-TO263-3 Marking 126N10N 123N10N Maximum ratings, at T j=25 °C, unless otherwise specified PG-TO262-3 126N10N ... |
| Document |
 IPI126N10N3G Data Sheet
PDF 338.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPI126N10N3 |
Infineon |
Power-Transistor |
|
| 2 | IPI120N04S3-02 |
Infineon |
Power-Transistor |
|
| 3 | IPI120N04S4-01 |
Infineon |
Power-Transistor |
|
| 4 | IPI120N04S4-02 |
Infineon |
Power-Transistor |
|
| 5 | IPI120N06S4-02 |
Infineon |
Power-Transistor |
|