OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA.
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G
Product Summary V DS R DS(on),max (SMD version) ID
25 V 8.6 mΩ 50 A
Type
IPD09N03LA
IPF09N03LA
IPS09N03LA
IPU09N03LA
Package Marking
P-TO252-3-11 09N03LA
P-TO252-3-23 09N03LA
P-TO251-3-11 09N03LA
P-TO251-3-1 09N03LA
Maximum ratings, at T j=25 °C, unless otherw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPF09N03LA |
Infineon Technologies AG |
Power Transistor | |
2 | IPF090N03LG |
Infineon |
Power-Transistor | |
3 | IPF009N04NF2S |
Infineon |
MOSFET | |
4 | IPF014N08NF2S |
Infineon |
MOSFET | |
5 | IPF016N06NF2S |
Infineon |
MOSFET | |
6 | IPF017N08NF2S |
Infineon |
MOSFET | |
7 | IPF019N12NM6 |
Infineon |
MOSFET | |
8 | IPF021N13NM6 |
Infineon |
MOSFET | |
9 | IPF04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
10 | IPF050N03L |
Infineon Technologies |
Fast switching MOSFET | |
11 | IPF050N03LG |
Infineon Technologies |
Power-Transistor | |
12 | IPF05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |