. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedforawiderangeofapplications
•N-Channel,normallevel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
1.4
mΩ
ID
282
A
Qoss
199
nC
QG
170
nC
PG-TO263-7
tab 1
7
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPF014N08NF2S
Package PG-TO263-7
Marking 014N08NS
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2022-09-23
StrongIRFETTM2Power.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPF016N06NF2S |
Infineon |
MOSFET | |
2 | IPF017N08NF2S |
Infineon |
MOSFET | |
3 | IPF019N12NM6 |
Infineon |
MOSFET | |
4 | IPF009N04NF2S |
Infineon |
MOSFET | |
5 | IPF021N13NM6 |
Infineon |
MOSFET | |
6 | IPF04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
7 | IPF050N03L |
Infineon Technologies |
Fast switching MOSFET | |
8 | IPF050N03LG |
Infineon Technologies |
Power-Transistor | |
9 | IPF05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
10 | IPF060N03LG |
Infineon Technologies |
Power-Transistor | |
11 | IPF067N20NM6 |
Infineon |
MOSFET | |
12 | IPF06N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |