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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedforawiderangeofapplications
•N-Channel,normallevel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
1.7
mΩ
ID
259
A
Qoss
145
nC
QG
124
nC
PG-TO263-7
tab 1
7
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPF017N08NF2S
Package PG-TO263-7
Marking 017N08NS
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2022-09-23
StrongIRFETTM2Power.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPF014N08NF2S |
Infineon |
MOSFET |
|
| 2 | IPF016N06NF2S |
Infineon |
MOSFET |
|
| 3 | IPF019N12NM6 |
Infineon |
MOSFET |
|
| 4 | IPF009N04NF2S |
Infineon |
MOSFET |
|
| 5 | IPF021N13NM6 |
Infineon |
MOSFET |
|
| 6 | IPF04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 7 | IPF050N03L |
Infineon Technologies |
Fast switching MOSFET |
|
| 8 | IPF050N03LG |
Infineon Technologies |
Power-Transistor |
|
| 9 | IPF05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 10 | IPF060N03LG |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPF067N20NM6 |
Infineon |
MOSFET |
|
| 12 | IPF06N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|